Speaker

Dr. Giancarlo Pepponi, Fondazione Bruno Kessler

Abstract

P-I-N semiconductor structures are well suited for the detection of single X-ray photons and the measurement of their energy by counting the number of electron-hole pairs generated in their intrinsic active region upon photoelectric absorption. Depending on the energy of the photons to be detected, different semiconductor materials are exploited, with silicon, germanium and cadmium-zinc-telluride being the most common ones. P-I-N diodes are the simplest implementation of such detectors and are still widely used. Silicon Drift Detectors exploit a lateral electric field to collect charge on a small electrode reducing capacitance and hence noise. Low Gain Avalanche Diodes exploit a high field region to induce charge multiplication by impact ionization and are being developed for the detection of low energy X-rays. Segmentation of the collection electrodes offer detection position sensitivity but clearly introduces complexity and depending on the segmentation pitch, dimensionality (1D or 2D) and total number of channels growing technological challenges. The ideal sensor offers a large solid angle of detection for sensitivity and a high count-rate capability for dynamic range without compromising energy resolution to allow characteristic line deconvolution, form factor and cost for scalability. An overview of the commonly used energy dispersive X-ray detectors and their exploitation for X-ray spectrometry as well as current research trends will be presented.

Online Attendance

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The Trento International School on Observation of the Earth and of the Universe (TISOEU) is an educational facility focused on the Sciences of the Earth and the Universe. It realizes initiatives for the scientific community, for undergraduate and doctoral students, as well as for stakeholders.