Fabrication and simulation of SiC devices for power switches

This course will present the students with the technology and process flow to fabricate silicon carbide (SiC) power devices. After the course the students should be able to understand the main correlations between processing parameters and the key performance parameters of SiC mosfets devices. The course will be supported by examples of process and device simulations with the TCAD software Sentaurus.

Short Bio:

Dr. Humberto Rodriguez-Alvarez is a specialist in the fabrication and simulation of compound semiconductor devices and processes, with extensive experience across both academia and industry. He has an established publication record, reflected in an h-index of 17 (Scopus), and is the inventor of granted and published patents in the field. Currently, he works at Alptronic srl as a Senior Systems Engineer, focusing on the reliability design and assessment of power components supported by data science methodologies.

Lessons: 

Friday, October 10th - 2:30-4:30 PM
Friday, October 24th - 2:30-4:30 PM
Thursday, November 13th  2:30-4:30 PM (hands-on session in PC lab)

To participate remotely and receive the link Zoom for the course, please contact lucio.pancheri@unitn.it