Fabrication and simulation of SiC devices for power switches

This course will present the students with the technology and process flow to fabricate silicon carbide (SiC) power devices. After the course the students should be able to understand the main correlations between processing parameters and the key performance parameters of SiC mosfets devices. The course will be supported by examples of process and device simulations with the TCAD software Sentaurus.

To participate remotely and receive the link Zoom for the course, please contact lucio.pancheri@unitn.it